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| PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES * 10A , 650V, RDS(ON)=1.0@VGS=10V, ID=5.0A * * * * * * Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1D G 3S 12D G MECHANICAL DATA * Case: TO-220AB / ITO-220AB Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION 1 TYPE PJP10N65 PJF10N65 MARKING P10N65 F10N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R J C R J A P J P 1 0 N6 5 P J F 1 0 N6 5 Uni ts V V 650 +3 0 10 40 156 1 .2 5 10 40 50 0 .4 A A W O Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e -5 5 to +1 5 0 750 0 .8 6 2 .5 2 .5 100 O C Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=13m mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance O Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-DEC.25.2009 PAGE . 1 PJP10N65 / PJF10N65 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 5.0A VDS=650V, VGS=0V V GS =+3 0 V, V D S =0 V 650 2 .0 - 0.85 - 4 .0 1.0 10 +1 0 0 V V uA n Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd - 3 8 .6 8 .4 9.8 14.8 22.6 4 8 .2 2 6 .8 1450 120 12 52 22 36 ns 90 42 2020 165 16 pF nC V D S =5 2 0 V, ID =1 0 A , V GS =1 0 V - t d (o n) tr t d (o ff) tf C C C i ss VDD=325V, I D =10A V GS =1 0 V, RG=25 - o ss V D S =2 5 V, V GS =0 V f=1 .0 MH Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS =1 0 A , V GS =0 V V GS =0 V, IF =1 0 A d i /d t=1 0 0 A /us - 450 4 .2 10 40 1 .4 - A A V ns uC Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. STAD-DEC.25.2009 PAGE . 2 PJP10N65 / PJF10N65 Typical Characteristics Curves ( Ta=25, unless otherwise noted) ID - Drain-to-Source Current (A) 16 14 12 10 8 6 4 2 0 VGS= 20V~ 6.0V ID - Drain Source Current (A) 20 18 100 VDS =50V 10 TJ = 125oC 25oC 5.0V 1 0.1 -55oC 0.01 0 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 5 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) 8 Fig.1 Output Characteristric Fig.2 Transfer Characteristric RDS(ON) - On Resistance() 2 RDS(ON) - On Resistance() 1.6 1.2 VGS=10V 0.8 VGS = 20V 0.4 0 0 4 8 12 16 20 4 3.5 3 ID =5.0A 2.5 2 TJ =25oC 1.5 1 0.5 0 3 4 ID - Drain Current (A) 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) 10 Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage 2.5 RDS(ON) - On-Resistance(Normalized) 2500 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 C - Capacitance (pF) VGS =10 V ID =5.0A 2000 f = 1MHz VGS = 0V Ciss 1500 1000 500 Coss Crss 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ - Junction Temperature (oC) VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature STAD-DEC.25.2009 Fig.6 Capacitance PAGE. 3 PJP10N65 / PJF10N65 Typical Characteristics Curves ( Ta=25, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 100 10 8 6 4 2 0 0 4 8 VDS=520V VDS=325V VDS=130V IS - Source Current (A) ID =10A VGS = 0V 10 TJ = 125oC 25oC -55oC 1 0.1 0.01 12 16 20 24 28 32 36 40 Qg - Gate Charge (nC) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(Normalized) 1.2 ID = 250A 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-DEC.25.2009 PAGE. 4 PJP10N65 / PJF10N65 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.25.2009 PAGE . 5 HALOGEN FREE PRODUCT DECLARATION (Use green molding compound:ELER-8) 1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm, Br+Cl<1000ppm,Sb2O3<100ppm. 2. If your company need halogen free product shall be note requirement green compound material on order for the halogen free product request. |
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